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167BZC WS7805K 7476A A143E CD4051BE HDSP5701 LT343 M3764
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  ? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 3356 maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteristics characteristics device device device device marking marking marking marking characteristic ? symbol ? rating ~? unit collector-emitter voltage ?OlO? v ceo 12 vdc collector-base voltage ?OO? v cbo 2 0 vdc emitter-base voltage lOO? v ebo 3 .0 vdc collector current - continuous ?O - Bm ic 10 0 madc characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg -55to+150 gm gm gm gm 3356(2SC3356) 3356(2SC3356) 3356(2SC3356) 3356(2SC3356) = = = = r25 r25 r25 r25 h h h h fe fe fe fe : : : : 5 5 5 5 0- 0- 0- 0- 100 100 100 100 ; ; ; ; 80 80 80 80 - - - - 150 150 150 150 ; ; ; ; 120 120 120 120 - - - - 220 220 220 220 ; ; ; ; 200 200 200 200 - - - - 3 3 3 3 00 00 00 00
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 3356 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. characteristic ? symbol ? min ? typ ? m ax ? unit emitter cutoff current lO? (v eb = 1 .0v,i c =0) i ebo 1.0 a collector cutoff current ?O? (v cb = 1 0v,i e =0) i cbo 1.0 a collector-base breakdown voltage ?OO? (ic=10ua) v (br)cbo 2 0 v collector-emitter breakdown voltage ?OlO? (ic=1ma) v (br)ceo 12 v emitter-base breakdown voltage lOO? (i e =10ua) v (br)ebo 3 v dc current gain ? (v ce = 1 0v,i c = 20 ma) h fe 5 0 3 00 gain bandwidth product ?e (v ce = 1 0v,i c = 2 0ma) f t 700 0 mhz noise figure S (v ce = 10 v,ic= 7 ma,f= 1.0g hz) nf 2.0 db feed-back capacitance (v cb =10v,i e =0,f=1.0mhz) c re 0.55 1. 0 pf
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm 3356 dimension dimension dimension dimension b?


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